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HANBit
HMF6M32M6V
FLASH-ROM MODULE 24MByte (6M x 32-Bit) ,72pin-SIMM, 3.0V Part No. HMF6M32M6V
GENERAL DESCRIPTION
The HMF6M32M6V is a high-speed flash read only memory (FROM) module containing 12,582,912 words organized in a x32bit configuration. The module consists of six 2M x 16 FROM mounted on a 72-pin, both-sided, FR4-printed circuit board. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state -machine, which controls the erase and programming circuitry. Write cycles also internally latch address es and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other flash or EPROM devices. Output enable (/OE) and write enable (/WE) can set the memory input and output. When FROM module is disable condition the module is becoming power standby mode, system designer can get low -power design. All module components may be powered from a single +3.0V DC power supply.
FEATURES
w Access time : 90, 120ns w High-density 24MByte design w High-reliability, low-power design w Single + 3V 0.3V power supply w Easy memory expansion w Hardware reset pin(RESET#) w FR4-PCB design w Low profile 72-pin SIMM w Minimum 1,000,000 write/erase cy cle w Flexible sector architecture w Embedded algorithms w Erase suspend / Erase resume PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 w Packages 72-pin SIMM M 18 19 20 21 22 23 24 Vss
PIN ASSIGNMENT
SYMBOL /RESET DQ0 DQ1 DQ2 DQ3 DQ4 DQ5 DQ6 Vcc DQ7 /CE_1L /CE_2L DQ8 DQ9 DQ10 DQ11 DQ12 DQ13 DQ14 DQ15 NC /CE_3H DQ16 PIN 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 SYMBOL DQ17 DQ18 DQ19 DQ20 DQ21 Vcc DQ22 DQ23 /CE_1H /CE_2H DQ24 DQ25 DQ26 DQ27 Vss DQ28 DQ29 DQ30 DQ31 NC NC /CE_3L A19 /OE PIN 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 SYMBOL /WE A18 A17 A16 A15 A14 A13 A12 A11 A10 Vcc A9 A8 A7 A6 A5 A4 A3 A2 A1 A0 A20 NC Vss
OPTIONS
w Timing 90ns access 120ns access
MARKING
- 90 -120
72-PIN SIMM TOP VIEW
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FUNCTIONAL BLOCK DIAGRAM
32 21 A0-20 /WE /OE /CE_1L /CE /Reset /Reset DQ 0-15
HMF6M32M6V
DQ0 - DQ31 A0 - A20 /WE
A0-20 DQ16-31 /WE /OE
DQ16-31
U1
U3
/CE /CE_1H
A0-20 DQ 0-15 /WE /CE_2L /WE /OE /CE /Reset
A0-20 DQ 16-31 /WE /OE DQ16-31
U2
U4
/CE /CE_2H
/Reset
A0-20 /WE /OE /CE_3L /Reset /WE /OE /CE DQ0-15
A0-20
DQ16-31
DQ 16-31
U5
/WE /OE
U6
/CE
/CE_3H
/Reset
/Reset /CE_3L
Option resister
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Vcc Supply Relative to Vss A9, /OE, /RESET, /WP_ACC Relative to Vss Voltage on All other Pins Relative to Vss Power Dissipation Storage Temperature Operating Temperature ( Industrial ) Operating Temperature ( Extended ) SYMBOL VCC VIN,OUT VIN,OUT PD TSTG TA
HMF6M32M6V
RATING -0.5V to +4.0V -0.5V to +12.5V -0.5V to +4.0V 6W oC to +150oC -65 -40oC to +85oC -55oC to +125oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL VCC VSS VIH VIL MIN 2.7V 0 2.0 -0.5 TYP. 3.0V 0 MAX 3.6V 0 Vcc+0.3V 0.8V
DC CHARACTERISTICS (CMOS Compatible)
PARAMETER ILI ILIT ILO ICC1 DESCRIPTION Input Load Current A9 Input Load Current Output Leakage Current Vcc Active Read Current (Note1) Vcc Active Write Current (Note 2 and 4) Vcc Standby Current Vcc Standby Current During Reset Automatic Sleep Mode(Note3) Input Low Voltage Input High Voltage Voltage for Autoselect and Temporary Unprotect Output Low Voltage Output High Voltage Low Vcc Lock-Out Voltage Vcc=3.0V 10% IOL=4.0mA, Vcc=Vcc min IOH=-2.0mA, Vcc=Vcc min IOH=-100uA, Vcc= Vcc min 0.85xVcc Vcc-0.4 2.3 2.5 TEST CONDITIONS VIN=Vss to Vcc, Vcc=Vcc max Vcc= Vcc max ; A9=12.5V VOUT= Vss to Vcc, Vcc= Vcc max /CE=VIL, /OE=VIH Word Mode 5MHZ 1MHZ 60 12 90 1.2 1.2 1.2 -0.5 0.7xVcc 11.5 MIN TYP. MAX 3.0 35 1.0 96 24 180 30 30 30 0.8 Vcc+0.3 12.5 0.45 mA uA uA uA V V V V V V V UNIT uA uA uA mA
ICC2 ICC3 ICC4 ICC5 VIL VIH VID VOL VOH1 VOH2 VLKO
/CE=VIL, /OE=VIH Vcc=Vcc max ; /CE,/Reset=Vcc0.3V Vcc=Vcc max ; /Reset=Vss0.3V VIH=Vcc0.3V; VIL=Vss0.3V
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Note : 1. 2. 3. 4. The Icc current listed is typically less 2mA/MHz, with /OE at V IH. Icc active while Embedded Erase or Embedded Program is progress.
HMF6M32M6V
Automatic sleep mode enables the low power mode when addresses remain stable for t ACC+30ns. Typical sleep mode current is 200nA. Not 100% tested.
LATCHUP CHARACTERISTICS
DESCRIPTION Input Voltage with respect to Vss on all pins except I/O Pins (Including A9,/OE, and /Reset) Input Voltage with respect to Vss on all I/O Pins Vcc Current Includes all pins except Vcc. Test conditions: Vcc=3.0V, one pin at a time. MIN -1.0V -1.0V -100mA MAX 12.5V Vcc+1.0V +100mA
DATA RETENTION
PARAMETER Minimum Pattern Data Retention Time TEST CONDITIONS 150 C 125 C
O O
MIN 10 20
UNIT Years Years
ERASE AND PROGRAMMING PERFORMANCE
PARAMETER Sector Erase Time Chip Erase Time Word Programming Time Chip Programming Time (Word Mode) (Note3) Notes : 1. Typical program and erase times assume the following conditions: 25 C, 3.0V Vcc, 1,000,000 cycles. Additionally programming typical assume checkerboard pattern. 2. Under worst case conditions of 90 C, Vcc=2.7V, 1,000,000 cycles. 3. The typical chip programming time is considerably less than the maximum chip programming time listed, sin ce most bytes program faster than the maximum program times listed 4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure. 5. System-level overhead is the time required to execute the two-or four-bus-cycle sequence for the program command. See table 9 for further information on command definitions. 6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.
O O
TYP (NOTE1) 1.6 112 11 24
MAX (NOTE2) 15
UNIT sec sec
COMMENTS Excludes 00h programming prior to erasure (Note4) Excludes system level overhead (Note5)
360 72
us sec
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SOP/TSOP PIN CAPACITANCE
PARAMETER SYMBOL CIN COUT CIN2 Notes : 1. Sampled, not 100% tested 2.Test conditions TA = 25 C, f=1.0 MHz.
o
HMF6M32M6V
PARAMETER DESCRIPTION Input Capacitance Output Capacitance Control Pin Capacitance
TEST SETUP VIN = 0 VOUT = 0 VIN = 0
TYP. 36 51 45
MAX 45 72 54
UNIT pF pF pF
TEST SPECIFICATIONS
TEST CONDITION Output load Output load capacitance, CL (Including jig capacitance) Input rise and fall times Input pulse levels Input timing measurement reference levels Output timing measurement reference levels 30 5 0.0 - 3.0 1.5 1.5 80R -90/ -120 1TTL gate 100 pF ns V V V UNIT
3.3V
Device Under Test CL
IN3064 or Equivalent
2.7kW
6.2kW
Diodes = IN3064 or Equivalent
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AC CHARACTERISTICS u Erase / Program Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVWL tWLAX tDVWH tWHDX Standard tWC tAS tAH tDS tDH tOEPH tGHWL tELWL tWHEH tWLWH tWHWL tWHWH1 tWHWH2 tGHWL tCS tCH tWP tWPH tWHWH1 tWHWH2 tVCS tRB tBUSY Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information DESCRIPTION Write Cycle Time (Note1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable High durning toggle bit polling Read Recovery Time Before Write(/OE High to /WE Low) /CE Setup Time /CE Hold Time Write Pulse Width Write Pulse Width High Programming Operation (Note2) Sector Erase Operation (Note2) Vcc Setup Time (Note1) Recovery Time from RY//BY Program/ Erase Valid to RY//BY Delay Word Min Min Min Min Min Min Min Min Min Min Min Typ Typ Min Min Min
HMF6M32M6V
-90 90 0 45 45 0 20 0 0 0 35 30 11 1.6 50 0 90
-120 120
UNIT ns ns
50 50
ns ns ns ns ns ns ns
50
ns ns us sec us ns ns
u Alternate /CE Controlled Erase/ Program Operations
PARAMETER SYMBOLS JEDEC tAVAV tAVEL tELAX tDVEH tEHDX Standard tWC tAS tAH tDS tDH tOES tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH2 Note: 1. Not 100% tested. 2. See the "Erase and Programming Performance" section for more Information .
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DESCRIPTION Write Cycle Time (Note1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Output Enable Setup Time Read Recovery Time Before Write(/OE High to /WE Low) /WE Setup Time /WE Hold Time /CE Pulse Width /CE Pulse Width High Programming Operation (Note2) Sector Erase Operation (Note2) Word Min Min Min Min Min Min Min Min Min Min Min Typ Typ
-90 90 0 45 45 0 20 0 0 0 35 30 11 1.6
-120 120 50 50
UNIT ns ns ns ns ns ns ns ns ns
tGHEL tWS tWH tCP tCPH tWHWH1 tWHWH2
50
ns ns us sec
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u READ OPERATIONS TIMING
HMF6M32M6V
u RESET TIMING
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u PROGRAM OPERATIONS TIMING
HMF6M32M6V
u CHIP/SECTOR ERASE OPERATION TIMINGS
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u DATA# POLLING TIMES(DURING EMBEDDED ALGORITHMS)
HMF6M32M6V
u TOGGLE# BIT TIMINGS (DURING EMBEDDED ALGORITHMS)
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u SECTOR PROTECT UNPROTECT TIMEING DIAGRAM
HMF6M32M6V
u ALTERNATE CE# CONTROLLED WRITE OPERATING TIMINGS
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PACKAGE DIMENSIONS
HMF6M32M6V
0.25 mm MAX
2.54 mm MIN Gold: 1.040.10 mm Solder: 0.9140.10 mm
1.27 mm
1.270.08 mm
(Solder & Gold Plating)
ORDERING INFORMATION
Part Number
Density
Org.
Package
Component Number 6EA 6EA
Vcc
Speed
HMF6M32M6V-90 HMF6M32M6V-120
24MByte 24MByte
6MX 32bit 6MX 32bit
72 Pin-SIMM 72 Pin-SIMM
3.0V 3.0V
90ns 120ns
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